UV Radiation Resistance and Solar Blindness of CsI and KBr Photocathodes

A detailed study of the stability of CsI and KBr photocathodes under UV irradiation is presented. UV quantum efficiency degradation was found to be more pronounced at lower illumination intensity for the same accumulated dose and illumination wavelength. For an equal number of extracted photoelectrons in-band UV exposure led to a larger sensitivity decay as compared to out-of-band illumination. The angle of radiation incidence was not important for the UV sensitivity degradation, while changes of visible light rejection (i.e., degradation of solar blindness) did depend on the incidence angle: the photocathodes illuminated at normal incidence were activated much faster than the films irradiated at grazing angle. We found that the increase of visible sensitivity can be characterized by the total accumulated dose and is independent of irradiation flux during UV activation. We also observed that heat annealing substantially improves the visible light rejection of C–sI photocathodes.